NISENE TECHNOLOGY GROUP
Chemical decapsulation

Precision chemical decapsulation, configured for the device.

The Nisene JetEtch Pro family provides controlled acid decapsulation for exposing semiconductor dies and internal package structures. Three configurations address standard chemical-decapsulation applications, copper-wire preservation and applications requiring both bias control and sub-ambient etchant cooling.

Compare configurations Request a sample evaluation Request a quote

Three JetEtch configurations

Select the configuration according to the package construction, wire-bond metallurgy, required etch conditions and analysis objective.

Standard chemical decapsulation

JetEtch Pro

Automated acid-decapsulation platform for repeatable laboratory processing of semiconductor packages.

Potential application areas — subject to engineering review

  • Gold-wire packages
  • Aluminum-wire packages
  • Routine failure-analysis work
  • Construction analysis
  • Counterfeit-component investigation
Explore JetEtch Pro
Bias-assisted copper-wire protection

JetEtch Pro CuProtect

JetEtch Pro configuration incorporating adjustable electrical bias during the etch process to support preservation of copper wire bonds.

Potential application areas — subject to engineering review

  • Copper-wire packages
  • Palladium-coated copper, subject to engineering confirmation
  • Packages susceptible to copper-wire corrosion during acid processing
  • Method development for sensitive devices
Explore CuProtect
Bias control + sub-ambient cooling

JetEtch Pro TotalProtect

JetEtch Pro configuration combining bias-assisted copper-wire protection with controlled sub-ambient cooling of the etchant.

Potential application areas — subject to engineering review

  • Sensitive copper-wire packages
  • Packages requiring lower-temperature processing
  • Complex or difficult encapsulants
  • Applications requiring a broader process window
Explore TotalProtect

Compare JetEtch configurations

Published specifications are shown below.

CapabilityJetEtch ProJetEtch Pro CuPROTECTJetEtch Pro TotalPROTECTSource
Controlled chemical decapsulationYesYesYesB p.1 / C p.1 / T p.1
Acid delivery modesPulse Etch and Vortex Etch, user selectablePulse Etch and Vortex Etch, user selectablePulse Etch and Vortex Etch, user selectableB p.12 / C p.2 / T p.2
Mixed-acid recipesYes — nitric:sulfuric and sulfuric:nitric 6:1, 5:1, 4:1, 3:1Yes — nitric:sulfuric and sulfuric:nitric 6:1, 5:1, 4:1, 3:1Yes — nitric:sulfuric and sulfuric:nitric 6:1, 5:1, 4:1, 3:1B p.12 / C p.2 / T p.2
Recipe storage100 user-defined programs in nonvolatile memory100 user-defined programs in nonvolatile memory100 user-defined programs in nonvolatile memoryB p.12 / C p.2 / T p.2
Etch time range1–1800 s in 1-second increments1–1800 s in 1-second increments1–1800 s in 1-second incrementsB p.12 / C p.2 / T p.2
Post-etch rinse optionsNitric acid, sulfuric acid or no rinseNitric acid, sulfuric acid or no rinseNitric acid, sulfuric acid or no rinseB p.12 / C p.2 / T p.2
Bias-voltage capabilityNo0.0–20 V in 0.1 V increments0.0–20 V in 0.1 V incrementsL (JetEtch Pro) / C p.2 / T p.2
Sub-ambient etchant coolingNoNoYesL
Nitric acid temperature range20–90 °C20–90 °C10–90 °CB p.12 / C p.2 / T p.2
Mixed-acid temperature range20–100 °C20–100 °C10–100 °CB p.12 / C p.2 / T p.2
Etchant volume1.0–10.0 mL/min, software selectable1.0–10.0 mL/min, software selectable1.0–10.0 mL/min, software selectableB p.12 / C p.2 / T p.2
Heat-up time0–120 s, user selectable0–120 s, user selectable0–120 s, user selectableB p.12 / C p.2 / T p.2
Reservoirs500 mL or 1 litre; 4 bottles (2 acid, 2 waste)500 mL or 1 litre; 4 bottles (2 acid, 2 waste)500 mL or 1 litre; 4 bottles (2 acid, 2 waste)B p.12 / C p.2 / T p.2
CertificationsCE, SEMI S-2-93, SEMI S-2-2000CE, SEMI S-2-93, SEMI S-2-2000CE, SEMI S-2-93, SEMI S-2-2000B p.12 / C p.2 / T p.2
Standard accessoriesBasic Kit supplied with each systemBasic Kit supplied with each systemBasic Kit supplied with each systemB p.12 / C p.2 / T p.2
Optional accessory kitsDIP/SIP, QFP, QFN/MLP, PLCC, PBGA, SOIC, Die-down BGA, UniversalDIP/SIP, QFP, QFN/MLP, PLCC, PBGA, SOIC, Die-down BGA, UniversalDIP/SIP, QFP, QFN/MLP, PLCC, PBGA, SOIC, Die-down BGA, UniversalB p.12 / C p.2 / T p.2
Facility requirementsChemical fume hood required; 0.5 m/s minimum flow (100 surface ft/min)Chemical fume hood required; 0.5 m/s minimum flow (100 surface ft/min)Chemical fume hood required; 0.5 m/s minimum flow (100 surface ft/min)B p.12 / C p.2 / T p.2
Power350 W at 95–130 VAC or 210–250 VAC350 W at 95–130 VAC or 210–250 VAC350 W at 95–130 VAC or 210–250 VACB p.12 / C p.2 / T p.2
System dimensions (etcher unit)290 h × 290 w × 419 d mm290 h × 290 w × 419 d mm290 h × 290 w × 419 d mmB p.12 / C p.2 / T p.2
System weight17 kg (38 lb), excluding bottle container and accessories17 kg (38 lb), excluding bottle container and accessories17 kg (38 lb), excluding bottle container and accessoriesB p.12 / C p.2 / T p.2
Warranty12 months parts and labour; 5 years on the micrometering pump12 months parts and labour; 5 years on the micrometering pump12 months parts and labour; 5 years on the micrometering pumpB p.12 / C p.2 / T p.2
Daisy-chained recipesNoNoNoS
Recommended application profileGold and aluminium wire; routine failure analysis, construction analysis and counterfeit detectionSilver wire and thick copper or CuPd wireUltra-thin copper wire and high wire-count devicesS

Sources: JetEtch Pro brochure; JetEtch Pro CuPROTECT insert; JetEtch Pro TotalPROTECT insert; and the Nisene comparison table published at www.nisene.com, accessed 17 September 2026. Nisene states that the JetEtch Pro can etch parts with each of the listed bonding-wire materials, but not as cleanly as the CuPROTECT and TotalPROTECT configurations. Acid consumption increases at lower etch temperatures. A blank field in a source document is not treated as a negative answer.

Step 1

Prepare the sample

Identify the package, die location, wire-bond metallurgy and required exposure area.

Step 2

Select the fixture

Select the appropriate gasket, alignment plate, backing component and etch-head arrangement.

Step 3

Configure the process

Set the approved recipe parameters for etchant delivery, temperature, timing, rinse and, where applicable, bias and cooling.

Step 4

Inspect the result

Remove, clean and inspect the sample in accordance with the laboratory's approved procedures.

Chemical decapsulation must be carried out by trained personnel in an appropriately equipped laboratory and in accordance with the equipment manual, safety data sheets and applicable regulations.

Engineered for controlled laboratory processing

System characteristics that support repeatable processing in a laboratory environment.

Controlled acid delivery

Configurable acid-delivery modes and flow settings support development of package-specific decapsulation processes.

Temperature management

Controlled heating supports repeatable process conditions. TotalProtect adds sub-ambient etchant cooling.

Recipe management

Stored process recipes support repeatable laboratory workflows and recall of approved parameters.

Separated waste handling

Dedicated waste-routing and containment features are designed to support segregation of process waste.

Pneumatic process cover

Pneumatic cover operation reduces manual interaction with the process chamber during an etch sequence.

Operator interface

A dedicated system interface provides access to process settings, recipe recall and operating status.

Bias-assisted copper-wire preservation

Copper wire bonds can be vulnerable to corrosion and process-generated artefacts during conventional chemical decapsulation. JetEtch Pro CuProtect introduces an adjustable electrical bias during processing to support preservation of copper-wire structures.

JetEtch Pro TotalProtect combines this bias capability with sub-ambient etchant cooling to provide a wider process-development range for sensitive packages.

The operating principle, applicable wire materials and process limits must be confirmed by Nisene engineering.

Bias control combined with etchant cooling

JetEtch Pro TotalProtect characteristics are confirmed for each supplied configuration.

Adjustable bias capability

Electrical bias applied during the etch sequence. Range

Sub-ambient etchant cooling

Controlled cooling of the etchant below ambient temperature.

Controlled heating

Process heating for recipes requiring elevated temperature.

Recipe sequencing

Sequenced process steps recalled from stored recipes.

Process-parameter flexibility

Parameter combinations available for method development.

Copper-wire application support

Applications engineering support for copper-wire packages.

Request a sample evaluation. Scope, sample quantity, method, timing and commercial terms will be confirmed by Nisene before work begins.

Fixtures and tooling for package-specific processing

The decapsulation result depends not only on the equipment configuration but also on accurate sample location, cavity definition, backing and pressure distribution.

Location gaskets

Position the package relative to the defined etch opening.

Definition gaskets

Define the area of encapsulant exposed to the etchant.

Monolithic gaskets

Combine sample location and cavity definition in a custom single-piece fixture.

Stepped gaskets

Support selected die-down BGA and other package configurations requiring raised geometry.

Alignment plates

Support larger packages or packages requiring dedicated alignment and backing arrangements.

Ram noses, blanks and locator components

Complete the sample stack-up and support controlled pressure, alignment and, where applicable, electrical bias.

Gasket dimensions, kit contents, part numbers and availability are not published.

Explore applications and fixtures

Package-specific application development

BGA QFN / DFN QFP / TQFP SOIC / SOP DIP CSP / WLCSP Die-down BGA Multi-die and stacked packages Custom or non-standard packages

Package compatibility depends on package construction, dimensions, die location, mold compound, wire-bond material, fixture availability and required exposure area.

Contact Nisene applications engineering before representing any package as fully supported.

Plan the installation

Published specifications are shown below.

Electrical supply

Fume extraction and ventilation

Approved acids and waste handling

Workbench, clearance and service access

Final installation requirements depend on model, configuration, territory and applicable site-safety regulations.

Request facility requirements

Support throughout the system lifecycle

Applications engineering

Fixture selection, process development and support for unfamiliar or challenging packages.

Installation and training

Available in accordance with the quotation, system configuration and applicable territory.

Service and repair

Technical diagnosis, repair and supported-system maintenance.

Spare parts and fixtures

Replacement components, application tooling and consumables subject to current availability.

Applications support Service and repair Submit an RMA

Chemical decapsulation documents

Download the available approved documents directly.

Document

JetEtch Pro product brochure

PDF document.

Download PDF
Document

JetEtch Pro CuProtect product insert

PDF document.

Download PDF
Document

JetEtch Pro TotalProtect product insert

PDF document.

Download PDF

Discuss your chemical-decapsulation requirement

Tell us about the package, wire-bond material, required exposure area and analysis objective. Nisene will review the application and advise on the appropriate configuration, fixture and evaluation route.

Nisene Technology Group
Based in Watsonville, California, USA.
417A Salinas Road, Watsonville, CA 95076, USA
sales@nisene.com
service@nisene.com
Schedule a meeting

Send an enquiry

Tell us the system, the package type and what you need to achieve, and our applications team will respond.

Email sales@nisene.com Service and RMA

Nisene Technology Group, 417A Salinas Road, Watsonville, CA 95076, USA