Chemical decapsulation

JETETCH PRO TOTALPROTECT

Bias-assisted chemical decapsulation with controlled etchant cooling.

JetEtch Pro TotalProtect combines the adjustable electrical-bias capability of JetEtch Pro CuProtect with controlled sub-ambient etchant cooling. The configuration is intended to support package-specific process development where both copper-wire preservation and lower-temperature chemical processing may be required.

Package suitability, wire material, electrical connection, fixture configuration, etchant-temperature requirements, process parameters and exposure area must be reviewed by Nisene engineering for each application.

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Compare JetEtch configurations

JetEtch Pro platform system on which the TotalPROTECT configuration is supplied. The TotalPROTECT insert reuses a CuPROTECT-badged photograph, so a neutral platform photograph is shown here instead. — JetEtch Pro platform system on which the TotalPROTECT configuration is supplied.

JetEtch chemical decapsulation with bias and temperature control

JetEtch Pro TotalProtect combines the controlled etchant-delivery, timing, recipe and rinse functions of the JetEtch platform with adjustable electrical bias and controlled etchant cooling.

The configuration is intended to support development of approved processes for semiconductor packages where Nisene engineering determines that both bias-assisted wire preservation and lower-temperature etchant processing should be evaluated.

Potential purposes

Copper-wire package failure analysis
Lower-temperature chemical-decapsulation process development
Die and bond-wire exposure
Construction analysis
Counterfeit-component investigation
Reliability and qualification analysis
Evaluation of sensitive wire-bond structures
Development of sequenced package-specific processes

Potential applications, wire-material compatibility and temperature requirements remain subject to Nisene engineering review.

Extending process development below ambient temperature

Some packages and wire-bond structures may require evaluation at lower etchant temperatures as part of the chemical-decapsulation process. TotalProtect adds controlled sub-ambient etchant cooling to the bias-assisted JetEtch configuration.

Cooling does not by itself establish package compatibility or a successful process. The required temperature, electrical-bias conditions, fixture design, etchant, timing and exposure geometry must be developed and approved for the application.

This page does not provide an operating recipe. Temperature settings, cooling limits, bias polarity, voltage, electrical connection and chemical-process parameters must be established only through approved Nisene documentation, training and applications-engineering support.

When TotalProtect may be the appropriate configuration

Bias-assisted lower-temperature processing

Applications for which Nisene engineering determines that both electrical bias and sub-ambient etchant cooling should be evaluated.

Sensitive copper-wire package investigation

Applications involving copper-wire structures requiring controlled evaluation of wire preservation, fixture design and process temperature.

Sequenced process development

Applications requiring approved combinations or sequences of etchant delivery, temperature, timing, rinse and bias parameters.

Repeatable laboratory workflows

Applications requiring recall of approved package-specific bias and temperature-controlled process parameters.

Final system and process selection depends on package construction, wire composition, mold compound, die location, available electrical connection, fixture design, etchant-temperature requirement and analysis objective.

JetEtch processing with integrated bias and cooling control

Capability descriptions only. No operating values are published in this section.

Controlled etchant delivery

Configurable delivery settings support package-specific chemical-decapsulation process development.

Temperature control

Controlled process temperature supports repeatable application of approved recipes.

Sub-ambient etchant cooling

Integrated cooling capability supports approved process development below ambient temperature.

Timing control

User-defined etch timing supports adjustment for different package and exposure requirements.

Recipe management

Stored recipes support recall of approved laboratory process parameters.

Process sequencing

Approved process stages may be arranged in a defined sequence, subject to current system capability and engineering confirmation.

Post-process rinse control

Configurable rinse settings support the post-etch process sequence.

Adjustable bias capability

User-selectable electrical-bias settings support development of approved copper-wire decapsulation processes.

Operator interface

A dedicated interface provides access to process settings, recipe selection, bias parameters, temperature controls and system status.

Controlled cooling as part of the etch process

Cooling setpoint

The etchant-temperature setting forms part of the process configuration. Available limits and increments are confirmed for the supplied configuration.

Temperature transition

The system configuration may support controlled movement between approved temperature conditions within a defined process.

Process monitoring

Temperature status is presented through the system interface, subject to confirmation of the current model configuration.

Application-specific limits

Permitted temperature conditions depend on the etchant, package, fixture, bias settings and approved process documentation.

Incorrect temperature, cooling, electrical connection or chemical-process settings may damage the sample or equipment. Use only approved fixtures, documentation and procedures.

Coordinating electrical bias and etchant temperature

Package electrical connection

The package must use an approved fixture, contact arrangement and application method.

Process-specific bias

Required polarity and bias conditions depend on the package and must be established by Nisene engineering.

Approved temperature condition

The required temperature condition depends on package construction, wire metallurgy, etchant and analysis objective.

Recipe integration

Bias, temperature, etchant delivery, timing and rinse parameters may form part of an approved package-specific process.

Electrical bias and cooling must not be configured independently of the complete approved process.

From package review to examination

Step 1

Review the package

Identify construction, dimensions, die location, wire material, accessible electrical connections and required exposure area.

Step 2

Confirm TotalProtect suitability

Nisene applications engineering reviews whether bias-assisted and temperature-controlled chemical decapsulation should be evaluated.

Step 3

Select tooling and connection method

Select the approved gasket, fixture, contact arrangement, backing element and etch-head configuration.

Step 4

Establish temperature requirements

Confirm the approved etchant-temperature condition and applicable cooling limits for the package.

Step 5

Select an approved process

Recall or establish approved etchant-delivery, temperature, timing, rinse and bias parameters.

Step 6

Run the controlled sequence

Process the sample in accordance with the equipment manual, approved laboratory procedures and applicable safety requirements.

Step 7

Clean and inspect

Complete the approved post-process procedure before optical, electrical or other failure-analysis examination.

Chemical decapsulation, electrical-bias processing and cooled-etchant operation must be carried out only by trained personnel in an appropriately equipped laboratory using approved chemicals, fixtures, electrical connections, cooling-system procedures, personal protective equipment, safety data sheets and site procedures.

Technical specifications

Values are sourced from the applicable brochure where stated. Unstated or unverified items remain clearly marked for confirmation.

Specifications transcribed from the **JetEtch Pro TotalPROTECT insert**, p.2. Specifications are subject to change without notice.
Specification	JetEtch Pro TotalProtect
Process type	Chemical decapsulation with adjustable electrical-bias capability and controlled etchant cooling
Base platform	JetEtch Pro, subject to configuration
Etchant-delivery modes	Pulse Etch mode and Vortex Etch mode (user selectable)
User-selectable etch time	1 – 1,800 seconds, in 1.0-second increments
Recipe capacity	100 user-defined programs, held in non-volatile memory
Mixed-acid capability	Nitric : sulfuric and sulfuric : nitric, at 6:1, 5:1, 4:1 and 3:1. Etchant volume 1.0 – 10.0 mL/min (software selectable)
Post-etch rinse control	Nitric acid, sulfuric acid, or no rinse
Temperature range — nitric acid	10 – 90 °C
Temperature range — mixed acids	10 – 100 °C (range automatically calibrated to the selected ratio)
Bias-voltage capability	Included
Bias-voltage range	0.0 – 20 V
Bias adjustment increment	0.1 V
Sub-ambient cooling	Included
Daisy-chained recipes	No
System dimensions	Etcher unit 290 h × 290 w × 419 d mm (11.5 × 11.5 × 16.5 in). Bottle container 230 h × 110 w × 110 d mm (9 × 4.25 × 4.25 in)
System weight	17 kg (38 lb), excluding bottle container and accessories
Electrical supply	350 W at 95 – 130 VAC, or 350 W at 210 – 250 VAC
Pneumatic supply	Clean dry air at 4.2 kg/cm² (60 – 100 psi). Nitrogen supply 2.8 lpm (0.1 cfm)
Exhaust requirements	Installation in a chemical fume hood is required, with a minimum flow rate of 0.5 m/s (100 surface ft/min)
Standard accessory kit	A standard basic Accessory Kit is supplied with every JetEtch Pro system
Optional accessory kits	DIP/SIP 0300601 · PLCC 0300602 · SOIC 0300603 · QFP 0300604 · PBGA 0300605 · Die-down BGA 0300606 · QFN/MLP 0300609 · Universal Accessory Kit 0300612. Custom-designed Monolithic Gaskets are also available
Certifications and standards	CE certification, SEMI S-2-93, SEMI S-2-2000, as printed in the brochure.
Warranty	12-month warranty covering all parts and labour, excluding consumable items. 5-year warranty on the micrometering pump assembly

Choose the appropriate JetEtch configuration

Core chemical decapsulation

JetEtch Pro

Base configuration for applications for which Nisene engineering determines that bias-assisted copper-wire protection and sub-ambient cooling are not required.

Explore JetEtch Pro

Bias-assisted copper-wire protection

JetEtch Pro CuProtect

Adds adjustable electrical bias intended to support copper-wire package process development.

Explore CuProtect

Bias + sub-ambient cooling

JetEtch Pro TotalProtect

Combines adjustable electrical bias with controlled sub-ambient etchant cooling for approved package-specific process development.

You are viewing JetEtch Pro TotalProtect

Configuration selection must be confirmed with Nisene applications engineering.

Application tooling and electrical connection

TotalProtect processing depends on package-specific sample location, cavity definition, pressure distribution, an approved electrical connection and a verified temperature-controlled process configuration.

Location gaskets

Position the package relative to the defined etch opening.

Definition gaskets

Define the area of encapsulant exposed to the etchant.

Monolithic gaskets

Combine sample location and cavity definition in a custom single-piece fixture.

Stepped gaskets

Support selected die-down BGA and other package configurations requiring raised geometry.

Alignment plates

Support larger packages or packages requiring dedicated alignment and backing arrangements.

Bias contact, ram and locator components

Support package positioning, pressure distribution and the approved electrical connection required for the process.

The correct tooling, electrical connection and temperature-controlled process must be selected or developed for each package.

Application-specific compatibility review

Package families

BGA QFN / DFN QFP / TQFP SOIC / SOP DIP PLCC CSP / WLCSP Die-down BGA Multi-die packages Stacked packages Custom packages

Wire materials

Copper Palladium-coated copper Other copper-alloy structures Unknown or mixed metallurgy

Process-temperature categories

Sub-ambient evaluation required Ambient-temperature evaluation Elevated-temperature evaluation Multi-stage temperature process Temperature requirement unknown

Compatibility depends on package construction, dimensions, die location, mold compound, bonding metallurgy, accessible electrical connection, fixture availability, etchant-temperature requirement and required exposure area.

No package, wire material or temperature condition should be represented as supported until reviewed by Nisene applications engineering.

Review representative TotalProtect results

Representative results. Contact Nisene for application examples relevant to your packages.

Scanning electron micrograph showing a row of copper bond wires preserved intact on the die surface after processing. — SEM: preserved copper wires. Source: TotalPROTECT insert, p.1.

Close-up scanning electron micrograph of a preserved ball bond and wire stem on the bond pad. — SEM: ball bond close-up. Source: TotalPROTECT insert, p.1.

Prepare the laboratory

Published specifications are shown below.

Chemical fume extraction

Installation requirements must be confirmed from the current facility-requirements document.

Electrical and pneumatic services

Required supplies depend on the current configuration and destination territory.

Bias connection and fixture controls

Requirements for the electrical connection, fixture arrangement and associated controls

Cooling-system placement and service access

Space, ventilation, connection and service-access requirements for the supplied cooling configuration must be confirmed before installation.

Chemical storage and waste handling

The customer facility must meet applicable chemical-storage, handling and waste-management requirements.

Workbench and equipment clearance

Clearance, supporting surface and service-access requirements

Final installation requirements depend on the supplied system and cooling configuration, destination, applicable regulations and customer site conditions.

Request facility requirements

Safety is part of the installation

Installation and operating responsibility

JetEtch Pro TotalProtect must be installed and operated only in an appropriately equipped laboratory by trained personnel. Customers are responsible for site-specific risk assessment, approved chemicals, ventilation, waste handling, electrical safety, cooling-system safety, personal protective equipment and compliance with applicable regulations.

Applicable compliance, declaration and installation documentation will be identified for the quoted system and destination and supplied where applicable.

Support throughout the equipment lifecycle

Applications engineering

Fixture selection, sample review, electrical-connection review, temperature-requirement review and process-development support for unfamiliar or challenging packages.

Installation and training

Available in accordance with the quotation, system configuration and applicable territory.

Service and repair

Technical diagnosis, repair and maintenance for supported systems and supplied cooling components.

Spare parts, fixtures, bias and cooling components

Replacement components, application tooling, contact components, cooling-system components and consumables subject to current availability.

Applications support Service and repair Submit an RMA

Current revision available on request.

Request this document

Discuss your TotalProtect application

Tell us about the package, wire-bond material, available electrical connection, required exposure area, temperature requirement and analysis objective. Nisene will review whether TotalProtect is appropriate and advise on system configuration, fixture selection and the evaluation route.

Nisene Technology Group

Based in Watsonville, California, USA.

417A Salinas Road, Watsonville, CA 95076, USA

sales@nisene.com

service@nisene.com

Schedule a meeting

Send an enquiry

Tell us the system, the package type and what you need to achieve, and our applications team will respond.

Email sales@nisene.com Service and RMA

Nisene Technology Group, 417A Salinas Road, Watsonville, CA 95076, USA