Chemical decapsulation

JETETCH PRO CUPROTECT

Bias-assisted chemical decapsulation for copper-wire package analysis.

JetEtch Pro CuProtect builds on the JetEtch Pro chemical-decapsulation platform by incorporating adjustable electrical bias during processing. The configuration is intended to support preservation of copper-wire structures that may be vulnerable during conventional acid decapsulation.

Package suitability, wire material, electrical connection, fixture configuration, process parameters and the required exposure area must be reviewed by Nisene engineering for each application.

Compare JetEtch configurations

JetEtch Pro CuPROTECT system, with the CuPROTECT nameplate on the front panel, operator control panel, sealed process chamber and reservoir module.
JetEtch Pro CuPROTECT system. Source: CuPROTECT insert, p.1.

JetEtch chemical decapsulation with adjustable bias capability

JetEtch Pro CuProtect combines the controlled etchant-delivery, temperature, timing, recipe and rinse functions of the JetEtch Pro platform with adjustable electrical bias capability.

The bias function is intended to support process development for semiconductor packages containing copper-wire structures. The applicable polarity, connection method, voltage, fixture arrangement and process limits must be established through approved Nisene application procedures.

Potential purposes

  • Copper-wire package failure analysis
  • Die and bond-wire exposure
  • Construction analysis
  • Counterfeit-component investigation
  • Reliability and qualification analysis
  • Package-specific process development
  • Evaluation of sensitive wire-bond structures
Potential applications and wire-material compatibility remain subject to Nisene engineering review.

Supporting preservation of copper-wire structures

Copper-wire structures may be susceptible to corrosion or process-generated artifacts during chemical decapsulation. JetEtch Pro CuProtect introduces controlled electrical bias during the etch sequence as part of a package-specific process intended to support preservation of the structures required for examination.

The effect of bias depends on package construction, wire composition, electrical connection, etchant, temperature, timing and fixture design.

This page does not provide an operating recipe. Bias polarity, voltage, electrical connection and process settings must be established only through Nisene documentation, training and applications-engineering support.

When CuProtect may be the appropriate configuration

Copper-wire package investigation

Applications involving copper-wire structures for which Nisene engineering determines that bias-assisted processing is appropriate.

Wire-preservation process development

Applications requiring controlled evaluation of bias, fixture design and chemical-decapsulation parameters.

Defined-area exposure

Applications using suitable fixtures and gaskets to control the package area exposed to the etchant.

Repeatable laboratory workflows

Applications requiring recall of approved package-specific etch and bias parameters.

Final system and process selection depends on package construction, wire composition, mold compound, die location, available electrical connection, fixture design and analysis objective.

JetEtch processing with integrated bias control

Capability descriptions only. No operating values are published in this section.

Controlled etchant delivery

Configurable delivery settings support package-specific chemical-decapsulation process development.

Temperature control

Controlled process temperature supports repeatable application of approved recipes.

Timing control

User-defined etch timing supports adjustment for different package and exposure requirements.

Recipe management

Stored recipes support recall of approved laboratory process parameters.

Post-process rinse control

Configurable rinse settings support the post-etch process sequence.

Adjustable bias capability

User-selectable electrical-bias settings support development of approved copper-wire decapsulation processes.

Bias-aware application tooling

Selected fixtures and electrical-contact components support the required sample connection and package positioning.

Operator interface

A dedicated interface provides access to process settings, recipe selection, bias parameters and system status.

Controlled electrical bias as part of the etch process

Adjustable bias setting

Electrical-bias capability is incorporated into the process configuration. The available range and increments are confirmed for the supplied configuration.

Package electrical connection

The package must be connected using the approved fixture, contact arrangement and application method.

Process-specific polarity

Required polarity and electrical configuration depend on the application and must be established by Nisene engineering.

Recipe integration

Bias parameters may form part of the approved package-specific laboratory recipe.

Incorrect electrical connection, polarity or process settings may damage the sample or equipment. Use only approved fixtures, documentation and procedures.

From package review to examination

Step 1

Review the package

Identify construction, dimensions, die location, wire material, accessible electrical connections and required exposure area.

Step 2

Confirm CuProtect suitability

Nisene applications engineering reviews whether bias-assisted chemical decapsulation is appropriate.

Step 3

Select tooling and connection method

Select the approved gasket, fixture, contact arrangement, backing element and etch-head configuration.

Step 4

Select an approved process

Recall or establish approved etchant-delivery, temperature, timing, rinse and bias parameters.

Step 5

Run the controlled sequence

Process the sample in accordance with the equipment manual, approved laboratory procedures and applicable safety requirements.

Step 6

Clean and inspect

Complete the approved post-process procedure before optical, electrical or other failure-analysis examination.

Chemical decapsulation and electrical-bias processing must be carried out only by trained personnel in an appropriately equipped laboratory, using approved chemicals, fixtures, electrical connections, personal protective equipment, safety data sheets and site procedures.

Technical specifications

Values are sourced from the applicable brochure where stated. Unstated or unverified items remain clearly marked for confirmation.

Specifications transcribed from the JetEtch Pro CuPROTECT insert, p.2. Specifications are subject to change without notice.
Specification JetEtch Pro CuProtect
Process type Chemical decapsulation with adjustable electrical-bias capability
Base platform JetEtch Pro, subject to configuration
Etchant-delivery modes Pulse Etch mode and Vortex Etch mode (user selectable)
User-selectable etch time 1 – 1,800 seconds, in 1.0-second increments
Recipe capacity 100 user-defined programs, held in non-volatile memory
Mixed-acid capability Nitric : sulfuric and sulfuric : nitric, at 6:1, 5:1, 4:1 and 3:1. Etchant volume 1.0 – 10.0 mL/min (software selectable)
Post-etch rinse control Nitric acid, sulfuric acid, or no rinse
Temperature range — nitric acid 20 – 90 °C
Temperature range — sulfuric acid 20 – 250 °C
Temperature range — mixed acids 20 – 100 °C (range automatically calibrated to the selected ratio)
Bias-voltage capability Included
Bias-voltage range 0.0 – 20 V
Bias adjustment increment 0.1 V
Daisy-chained recipes No
System dimensions Etcher unit 290 h × 290 w × 419 d mm (11.5 × 11.5 × 16.5 in). Bottle container 230 h × 110 w × 110 d mm (9 × 4.25 × 4.25 in)
System weight 17 kg (38 lb), excluding bottle container and accessories
Electrical supply 350 W at 95 – 130 VAC, or 350 W at 210 – 250 VAC
Pneumatic supply Clean dry air at 4.2 kg/cm² (60 – 100 psi). Nitrogen supply 2.8 lpm (0.1 cfm)
Exhaust requirements Installation in a chemical fume hood is required, with a minimum flow rate of 0.5 m/s (100 surface ft/min)
Standard accessory kit A standard basic Accessory Kit is supplied with every JetEtch Pro system
Optional accessory kits DIP/SIP 0300601 · PLCC 0300602 · SOIC 0300603 · QFP 0300604 · PBGA 0300605 · Die-down BGA 0300606 · QFN/MLP 0300609 · Universal Accessory Kit 0300612. Custom-designed Monolithic Gaskets are also available
Certifications and standards CE certification, SEMI S-2-93, SEMI S-2-2000, as printed in the brochure.
Warranty 12-month warranty covering all parts and labour, excluding consumable items. 5-year warranty on the micrometering pump assembly

Choose the appropriate JetEtch configuration

Core chemical decapsulation

JetEtch Pro

Base configuration for applications for which Nisene engineering determines that bias-assisted copper-wire protection is not required.

Explore JetEtch Pro
Bias-assisted copper-wire protection

JetEtch Pro CuProtect

JetEtch configuration incorporating adjustable electrical bias to support copper-wire package process development.

You are viewing JetEtch Pro CuProtect
Bias + sub-ambient cooling

JetEtch Pro TotalProtect

Combines bias-assisted copper-wire protection with controlled sub-ambient etchant cooling.

Explore TotalProtect
Configuration selection must be confirmed with Nisene applications engineering.

Application tooling and electrical connection

CuProtect processing depends on package-specific sample location, cavity definition, pressure distribution and an approved electrical connection to the device.

Location gaskets

Position the package relative to the defined etch opening.

Definition gaskets

Define the area of encapsulant exposed to the etchant.

Monolithic gaskets

Combine sample location and cavity definition in a custom single-piece fixture.

Stepped gaskets

Support selected die-down BGA and other package configurations requiring raised geometry.

Alignment plates

Support larger packages or packages requiring dedicated alignment and backing arrangements.

Bias contact, ram and locator components

Support package positioning, pressure distribution and the approved electrical connection required for the CuProtect process.

The correct tooling and electrical connection must be selected or developed for each package.

Application-specific compatibility review

Package families

BGA QFN / DFN QFP / TQFP SOIC / SOP DIP PLCC CSP / WLCSP Die-down BGA Multi-die packages Stacked packages Custom packages

Wire materials

Copper Palladium-coated copper Other copper-alloy structures Unknown or mixed metallurgy

Package and wire-material compatibility depends on construction, dimensions, die location, mold compound, bonding metallurgy, accessible electrical connection, fixture availability and required exposure area.

No package or wire material should be represented as supported until reviewed by Nisene applications engineering.

Review representative CuProtect results

Representative results. Contact Nisene for application examples relevant to your packages.

Scanning electron micrograph showing copper bond wires preserved intact on the die surface after CuPROTECT processing.
SEM: preserved copper wires. Source: CuPROTECT insert, p.1.
Copper wire bonds fully exposed at the bond pads, with wire stems and ball bonds intact after processing.
Complete copper wire bond exposure. Source: CuPROTECT insert, p.1.

Prepare the laboratory

Published specifications are shown below.

Chemical fume extraction

Installation requirements must be confirmed from the current facility-requirements document.

Electrical and pneumatic services

Required supplies depend on the current configuration and destination territory.

Bias connection and fixture controls

Requirements for the electrical connection, fixture arrangement and associated controls

Chemical storage and waste handling

The customer facility must meet applicable chemical-storage, handling and waste-management requirements.

Workbench and service access

Clearance, supporting surface and service-access requirements

Final installation requirements depend on the supplied configuration, destination, applicable regulations and customer site conditions.

Request facility requirements

Safety is part of the installation

Installation and operating responsibility

JetEtch Pro CuProtect must be installed and operated only in an appropriately equipped laboratory by trained personnel. Customers are responsible for site-specific risk assessment, approved chemicals, ventilation, waste handling, electrical safety, personal protective equipment and compliance with applicable regulations.

Applicable compliance, declaration and installation documentation will be identified for the quoted system and destination and supplied where applicable.

Support throughout the equipment lifecycle

Applications engineering

Fixture selection, sample review, electrical-connection review and process-development support for unfamiliar or challenging packages.

Installation and training

Available in accordance with the quotation, system configuration and applicable territory.

Service and repair

Technical diagnosis, repair and maintenance for supported systems.

Spare parts, fixtures and bias components

Replacement components, application tooling, contact components and consumables subject to current availability.

JetEtch Pro CuProtect resources

Current document revisions are available on request.

Discuss your CuProtect application

Tell us about the package, wire-bond material, available electrical connection, required exposure area and analysis objective. Nisene will review whether CuProtect is appropriate and advise on system configuration, fixture selection and the evaluation route.

Nisene Technology Group
Based in Watsonville, California, USA.
417A Salinas Road, Watsonville, CA 95076, USA
sales@nisene.com
service@nisene.com
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Send an enquiry

Tell us the system, the package type and what you need to achieve, and our applications team will respond.

Email sales@nisene.com Service and RMA

Nisene Technology Group, 417A Salinas Road, Watsonville, CA 95076, USA