JETETCH PRO CUPROTECT
JetEtch Pro CuProtect builds on the JetEtch Pro chemical-decapsulation platform by incorporating adjustable electrical bias during processing. The configuration is intended to support preservation of copper-wire structures that may be vulnerable during conventional acid decapsulation.

JetEtch Pro CuProtect combines the controlled etchant-delivery, temperature, timing, recipe and rinse functions of the JetEtch Pro platform with adjustable electrical bias capability.
The bias function is intended to support process development for semiconductor packages containing copper-wire structures. The applicable polarity, connection method, voltage, fixture arrangement and process limits must be established through approved Nisene application procedures.
Potential purposes
Copper-wire structures may be susceptible to corrosion or process-generated artifacts during chemical decapsulation. JetEtch Pro CuProtect introduces controlled electrical bias during the etch sequence as part of a package-specific process intended to support preservation of the structures required for examination.
The effect of bias depends on package construction, wire composition, electrical connection, etchant, temperature, timing and fixture design.
Applications involving copper-wire structures for which Nisene engineering determines that bias-assisted processing is appropriate.
Applications requiring controlled evaluation of bias, fixture design and chemical-decapsulation parameters.
Applications using suitable fixtures and gaskets to control the package area exposed to the etchant.
Applications requiring recall of approved package-specific etch and bias parameters.
Capability descriptions only. No operating values are published in this section.
Configurable delivery settings support package-specific chemical-decapsulation process development.
Controlled process temperature supports repeatable application of approved recipes.
User-defined etch timing supports adjustment for different package and exposure requirements.
Stored recipes support recall of approved laboratory process parameters.
Configurable rinse settings support the post-etch process sequence.
User-selectable electrical-bias settings support development of approved copper-wire decapsulation processes.
Selected fixtures and electrical-contact components support the required sample connection and package positioning.
A dedicated interface provides access to process settings, recipe selection, bias parameters and system status.
Electrical-bias capability is incorporated into the process configuration. The available range and increments are confirmed for the supplied configuration.
The package must be connected using the approved fixture, contact arrangement and application method.
Required polarity and electrical configuration depend on the application and must be established by Nisene engineering.
Bias parameters may form part of the approved package-specific laboratory recipe.
Identify construction, dimensions, die location, wire material, accessible electrical connections and required exposure area.
Nisene applications engineering reviews whether bias-assisted chemical decapsulation is appropriate.
Select the approved gasket, fixture, contact arrangement, backing element and etch-head configuration.
Recall or establish approved etchant-delivery, temperature, timing, rinse and bias parameters.
Process the sample in accordance with the equipment manual, approved laboratory procedures and applicable safety requirements.
Complete the approved post-process procedure before optical, electrical or other failure-analysis examination.
Chemical decapsulation and electrical-bias processing must be carried out only by trained personnel in an appropriately equipped laboratory, using approved chemicals, fixtures, electrical connections, personal protective equipment, safety data sheets and site procedures.
Values are sourced from the applicable brochure where stated. Unstated or unverified items remain clearly marked for confirmation.
| Specification | JetEtch Pro CuProtect |
|---|---|
| Process type | Chemical decapsulation with adjustable electrical-bias capability |
| Base platform | JetEtch Pro, subject to configuration |
| Etchant-delivery modes | Pulse Etch mode and Vortex Etch mode (user selectable) |
| User-selectable etch time | 1 – 1,800 seconds, in 1.0-second increments |
| Recipe capacity | 100 user-defined programs, held in non-volatile memory |
| Mixed-acid capability | Nitric : sulfuric and sulfuric : nitric, at 6:1, 5:1, 4:1 and 3:1. Etchant volume 1.0 – 10.0 mL/min (software selectable) |
| Post-etch rinse control | Nitric acid, sulfuric acid, or no rinse |
| Temperature range — nitric acid | 20 – 90 °C |
| Temperature range — sulfuric acid | 20 – 250 °C |
| Temperature range — mixed acids | 20 – 100 °C (range automatically calibrated to the selected ratio) |
| Bias-voltage capability | Included |
| Bias-voltage range | 0.0 – 20 V |
| Bias adjustment increment | 0.1 V |
| Daisy-chained recipes | No |
| System dimensions | Etcher unit 290 h × 290 w × 419 d mm (11.5 × 11.5 × 16.5 in). Bottle container 230 h × 110 w × 110 d mm (9 × 4.25 × 4.25 in) |
| System weight | 17 kg (38 lb), excluding bottle container and accessories |
| Electrical supply | 350 W at 95 – 130 VAC, or 350 W at 210 – 250 VAC |
| Pneumatic supply | Clean dry air at 4.2 kg/cm² (60 – 100 psi). Nitrogen supply 2.8 lpm (0.1 cfm) |
| Exhaust requirements | Installation in a chemical fume hood is required, with a minimum flow rate of 0.5 m/s (100 surface ft/min) |
| Standard accessory kit | A standard basic Accessory Kit is supplied with every JetEtch Pro system |
| Optional accessory kits | DIP/SIP 0300601 · PLCC 0300602 · SOIC 0300603 · QFP 0300604 · PBGA 0300605 · Die-down BGA 0300606 · QFN/MLP 0300609 · Universal Accessory Kit 0300612. Custom-designed Monolithic Gaskets are also available |
| Certifications and standards | CE certification, SEMI S-2-93, SEMI S-2-2000, as printed in the brochure. |
| Warranty | 12-month warranty covering all parts and labour, excluding consumable items. 5-year warranty on the micrometering pump assembly |
Base configuration for applications for which Nisene engineering determines that bias-assisted copper-wire protection is not required.
Explore JetEtch ProJetEtch configuration incorporating adjustable electrical bias to support copper-wire package process development.
You are viewing JetEtch Pro CuProtectCombines bias-assisted copper-wire protection with controlled sub-ambient etchant cooling.
Explore TotalProtectCuProtect processing depends on package-specific sample location, cavity definition, pressure distribution and an approved electrical connection to the device.
Position the package relative to the defined etch opening.
Define the area of encapsulant exposed to the etchant.
Combine sample location and cavity definition in a custom single-piece fixture.
Support selected die-down BGA and other package configurations requiring raised geometry.
Support larger packages or packages requiring dedicated alignment and backing arrangements.
Support package positioning, pressure distribution and the approved electrical connection required for the CuProtect process.
Package and wire-material compatibility depends on construction, dimensions, die location, mold compound, bonding metallurgy, accessible electrical connection, fixture availability and required exposure area.
Representative results. Contact Nisene for application examples relevant to your packages.


Published specifications are shown below.
Installation requirements must be confirmed from the current facility-requirements document.
Required supplies depend on the current configuration and destination territory.
Requirements for the electrical connection, fixture arrangement and associated controls
The customer facility must meet applicable chemical-storage, handling and waste-management requirements.
Clearance, supporting surface and service-access requirements
JetEtch Pro CuProtect must be installed and operated only in an appropriately equipped laboratory by trained personnel. Customers are responsible for site-specific risk assessment, approved chemicals, ventilation, waste handling, electrical safety, personal protective equipment and compliance with applicable regulations.
Applicable compliance, declaration and installation documentation will be identified for the quoted system and destination and supplied where applicable.
Fixture selection, sample review, electrical-connection review and process-development support for unfamiliar or challenging packages.
Available in accordance with the quotation, system configuration and applicable territory.
Technical diagnosis, repair and maintenance for supported systems.
Replacement components, application tooling, contact components and consumables subject to current availability.
Current document revisions are available on request.
Current revision available on request.
Request this documentThe current approved brochure supplied by Nisene. PDF, 2.9 MB.
Download PDFCurrent revision available on request.
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Request this documentCurrent revision available on request.
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Request this documentTell us about the package, wire-bond material, available electrical connection, required exposure area and analysis objective. Nisene will review whether CuProtect is appropriate and advise on system configuration, fixture selection and the evaluation route.
Tell us the system, the package type and what you need to achieve, and our applications team will respond.
Email sales@nisene.com Service and RMANisene Technology Group, 417A Salinas Road, Watsonville, CA 95076, USA