PlasmaEtch MIP4761
PlasmaEtch MIP4761
MIP4761 ETCHING
The PlasmaEtch decapsulation system is a patented gas-based semiconductor device etching system. It utilizes microwave-induced plasma (MIP) to create chemical radicals for isotropic etching.
The PlasmaEtch features a versatile gas selection between four gas types, all controlled precisely by the highest quality components, including precision mass flow controllers (MFC). Its MFCs allow for greater variety of options for etch parameters to provide the best etching results at different stages of the etch decap process.
For the beginning stages of etching an encapsulated integrated circuit, which is typically the removal of epoxy and silica, it is best to use Oxygen (O2 ) mixed with other gases.
PlasmaEtch Highlights
Proprietary Decapsulation Process
Best Solution for Silver Wires Etches a Wide Variety of Package Types Wet Chemical-free Decap Eco-friendly Touchscreen Interface PC/Windows 10-based GUI Etches Samples with Cu, Au, Ag, Al Wire Types
Innovative Features of PlasmaEtch:
- Downstream Microwave Plasma
- Etching Vacuum Chamber
- Low Temperature Etching
- Isotropic Etching etching by radicals
- Low operation cost
- Customer only supplies O2
Highlights Include:
- Highly Customizable Etch Recipes
- Etches a Wide Variety of Package Types
- Completely Chemical-free Decap
- Eco-friendly
- Touchscreen Interface
- PC/Windows-based GUI
- The Only Solution for Silver Wires
- Etches Samples with All Wire Types
- Small Footprint Suited for Tabletop
FASTEST AND MOST PRECISE
Our proprietary vacuum downstream Plasma system has been specially developed to meet your failure Analysis needs. It is highly efficient in removing encapsulant and protecting the wires at the same time, It also uses minimum amount of gases to achieve maximum results. The Etching speed has been significantly increase because of its efficiency.
SILVER , COPPER , GOLD , Alu
The PlasmaEtch can etch most sample sizes, encapsulant types, wire bonding types, and combinations thereof. Whether it’s a more traditional gold wire sample, or if the sample features Copper wire (Cu), Copper Palladium (Pd) wires, or silver (Ag) wires, or Aluminum wires. The MIP PlasmaEtch delivers a safe, reliable and repeatable etch.
INNOVATIVE FEATURES
Chamber and Device Temperature: The temperature is well below the temperature range where damage can occur to the device.
Dynamic Software: Multi-step recipes allow for pre-programming for a specific device requiring different etch parameters to optimize etching for different stages of decapsulation.
Multi-IC Device Decapsulation Capability: The Stage has a 50mm cavity, allowing the etching of multiple devices simultaneously.
PRE-CAVITATION
Pre-cavitation via laser or milling the sample device is helpful to speed up the decapsulation process.
The PlasmaEtch, featuring MIP technology, can clear the encapsulant of most package types and reveal the complete die surface and wire sweep with minimal sample prep in just a few hours — if not sooner.
LOWEST OPERATING COSTS
Compared to acid etching and other plasma-based decapsulation systems, the cost to operate the PlasmaEtch MIP system is relatively inexpensive. As the PlasmaEtch operates under vacuum, its processes require very low gas consumption. Each etch uses a minimal amount of each gas — for example: 50 sccm or less of O2.
The PlasmaEtch also requires minimal maintenance and servicing to continue performing smoothly and effectively.